Part number:
FQP3N30
Manufacturer:
Fairchild Semiconductor
File Size:
673.84 KB
Description:
300v n-channel mosfet.
FQP3N30_FairchildSemiconductor.pdf
Datasheet Details
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQP3N30 Features
* 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.6 A
* Low Gate Charge (Typ. 5.5 nC)
* Low Crss (Typ. 6 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
FQP3N30_FairchildSemiconductor.pdf
Datasheet Details
FQP3N30
Fairchild Semiconductor
673.84 KB
300v n-channel mosfet.
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