FQP3N30 Datasheet - Fairchild Semiconductor

FQP3N30 300V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP3N30 Features

* 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.6 A

* Low Gate Charge (Typ. 5.5 nC)

* Low Crss (Typ. 6 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

FQP3N30_FairchildSemiconductor.pdf