Part number:
FQP3N30
Manufacturer:
Fairchild Semiconductor
File Size:
673.84 KB
Description:
300v n-channel mosfet.
* 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.6 A
* Low Gate Charge (Typ. 5.5 nC)
* Low Crss (Typ. 6 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
FQP3N30
Fairchild Semiconductor
673.84 KB
300v n-channel mosfet.
📁 Related Datasheet
FQP3N25 - 250V N-Channel MOSFET
(Fairchild Semiconductor)
FQP3N25
November 2000
QFET
FQP3N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pro.
FQP3N40 - 400V N-Channel MOSFET
(Fairchild Semiconductor)
QFET
$ $ $ $ $ $ % &' ())* + , - (Ω .* , /) * 0 1 2 )
3 0 1 .
FQP3N50C - 500V N-Channel MOSFET
(ON Semiconductor)
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
QFET®
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features
• 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low ga.
FQP3N60 - 600V N-Channel MOSFET
(Fairchild Semiconductor)
FQP3N60
April 2000
QFET
FQP3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
FQP3N60C - N-Channel MOSFET
(ON Semiconductor)
MOSFET - N-Channel QFET)
600 V, 3.4 W, 3.0 A
FQP3N60C
General Description This N−Channel enhancement mode power MOSFET is produced
using ON Semicondu.
FQP3N60C - N-Channel MOSFET
(Fairchild Semiconductor)
FQP3N60C — N-Channel QFET® MOSFET
December 2013
FQP3N60C
N-Channel QFET® MOSFET
600 V, 3.0 A, 3.4 Ω Description
This N-Channel enhancement mode pow.
FQP3N80 - 800V N-Channel MOSFET
(Fairchild Semiconductor)
FQP3N80
September 2000
QFET
FQP3N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pr.
FQP3N80C - 800V N-Channel MOSFET
(Fairchild Semiconductor)
FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 .
