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FQP3N30 - 300V N-Channel MOSFET

FQP3N30 Description

FQP3N30 * N-Channel QFET® MOSFET FQP3N30 N-Channel QFET® MOSFET 300 V, 3.2 A, 2.2 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP3N30 Features

* 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max. ) @ VGS = 10 V, ID = 1.6 A
* Low Gate Charge (Typ. 5.5 nC)
* Low Crss (Typ. 6 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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Datasheet Details

Part number
FQP3N30
Manufacturer
Fairchild Semiconductor
File Size
673.84 KB
Datasheet
FQP3N30_FairchildSemiconductor.pdf
Description
300V N-Channel MOSFET

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300V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP3N30-like datasheet

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