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FQP13N50C - N-Channel MOSFET

FQP13N50C Description

FQP13N50C / FQPF13N50C * N-Channel QFET® MOSFET FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ .
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

FQP13N50C Features

* 13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A
* Low Gate Charge (Typ. 43 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-S

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FQP13N50C-like datasheet

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