FQP13N50C

N-Channel MOSFET

ON Semiconductor

FQP13N50C Features

* 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A

* Low Gate Charge (Typ. 43 nC)

* Low Crss (Typ. 20 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-S

FQP13N50C General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high .

FQP13N50C Datasheet (1.02 MB)