Datasheet4U Logo Datasheet4U.com

FQP13N10

100V N-Channel MOSFET

FQP13N10 Features

* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

FQP13N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQP13N10 Datasheet (618.35 KB)

Rating: 1 ★ (3 votes)
Preview of FQP13N10 PDF

Datasheet Details

Part number:

FQP13N10

Manufacturer:

Fairchild Semiconductor

File Size:

618.35 KB

Description:

100v n-channel mosfet.

📁 Related Datasheet

FQP13N10 N-Channel MOSFET (INCHANGE)

FQP13N10L N-Channel MOSFET (Fairchild Semiconductor)

FQP13N10L N-Channel MOSFET (INCHANGE)

FQP13N06 60V N-Channel MOSFET (Fairchild Semiconductor)

FQP13N06L N-Channel MOSFET (Fairchild Semiconductor)

FQP13N50 N-Channel MOSFET (Fairchild Semiconductor)

FQP13N50C N-Channel MOSFET (Fairchild Semiconductor)

FQP13N50C N-Channel MOSFET (ON Semiconductor)

FQP13N50CF N-Channel MOSFET (Fairchild Semiconductor)

FQP10N20 N-Channel 200V MOSFET (VBsemi)

TAGS

FQP13N10 100V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FQP13N10 Datasheet Preview Page 2 FQP13N10 Datasheet Preview Page 3

FQP13N10 Distributor