FQP13N10L Datasheet - Fairchild Semiconductor

FQP13N10L N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP13N10L Features

* 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A

* Low Gate Charge (Typ. 8.7 nC)

* Low Crss (Typ. 20 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwis

FQP13N10L_FairchildSemiconductor.pdf