FQP13N10L N-Channel MOSFET

Fairchild Semiconductor

Description

FQP13N10L * N-Channel QFET® MOSFET FQP13N10L N-Channel QFET® MOSFET 100 V, 12.8 A, 180 mΩ December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQP13N10L
Manufacturer: Fairchild Semiconductor
File Size: 1.10 MB
Datasheet: FQP13N10L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 12.8 A, 100 V, RDS(on) = 180 mΩ (Max. ) @ VGS = 10 V, ID = 6.4 A
* Low Gate Charge (Typ. 8.7 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwis

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FQP13N10L N-Channel MOSFET Fairchild Semiconductor

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