FQP13N06L N-Channel MOSFET

Fairchild Semiconductor

Description

FQP13N06L * N-Channel QFET® MOSFET FQP13N06L N-Channel QFET® MOSFET 60 V, 13.6 A, 110 mΩ .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQP13N06L
Manufacturer: Fairchild Semiconductor
File Size: 476.20 KB
Datasheet: FQP13N06L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 13.6 A, 60 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 6.8 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 17 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise

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FQP13N06L N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQP13N06L-like datasheet