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FQP13N06L - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQP13N06L
Manufacturer: Fairchild Semiconductor
File Size: 476.20 KB
Datasheet: FQP13N06L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

FQP13N06L Product details

Description

This N-Channel enhancement mode power.

Features

13.6 A, 60 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 6.8 A.
Low Gate Charge (Typ. 4.8 nC).
Low Crss (Typ. 17 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sour.

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N-Channel MOSFET Fairchild Semiconductor

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