FQP13N50C Datasheet - Fairchild Semiconductor

FQP13N50C N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQP13N50C Features

* 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A

* Low Gate Charge (Typ. 43 nC)

* Low Crss (Typ. 20 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drai

FQP13N50C_FairchildSemiconductor.pdf