FQP17P10 Datasheet - ON Semiconductor

FQP17P10 P-Channel MOSFET

MOSFET P-Channel, QFET) -100 V, -16.5 A, 190 mW FQP17P10 This P Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching pow.

FQP17P10 Features

* 16.5 A,

* 100 V, RDS(on) = 190 mW (Max.) at VGS =

* 10 V, ID =

* 8.25 A

* Low Gate Charge (Typ. 30 nC)

* Low Crss (Typ. 100 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating

* This is a Pb

* F

FQP17P10-ONSemiconductor.pdf