FQP17P06 60V P-Channel MOSFET

Fairchild Semiconductor

Description

FQP17P06 P-Channel QFET® MOSFET March 2013 FQP17P06 P-Channel QFET® MOSFET - 60 V, - 17 A, 120 m .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQP17P06
Manufacturer: Fairchild Semiconductor
File Size: 452.56 KB
Datasheet: FQP17P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

Features

* - 17 A, - 60 V, RDS(on) = 120 m (Max. ) @ VGS = - 10 V, ID = - 8.5 A
* Low Gate Charge (Typ.21 nC)
* Low Crss (Typ. 80 pF)
* 100% Avalanche Tested
* 175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless other

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FQP17P06 60V P-Channel MOSFET Fairchild Semiconductor

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