FQP17P06 Datasheet - Fairchild Semiconductor

FQP17P06 60V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

FQP17P06 Features

* - 17 A, - 60 V, RDS(on) = 120 m (Max.) @ VGS = - 10 V, ID = - 8.5 A

* Low Gate Charge (Typ.21 nC)

* Low Crss (Typ. 80 pF)

* 100% Avalanche Tested

* 175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless other

FQP17P06_FairchildSemiconductor.pdf