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FQP17P06 - 60V P-Channel MOSFET

FQP17P06 Description

FQP17P06 P-Channel QFET® MOSFET March 2013 FQP17P06 P-Channel QFET® MOSFET - 60 V, - 17 A, 120 m .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

FQP17P06 Features

* - 17 A, - 60 V, RDS(on) = 120 m (Max. ) @ VGS = - 10 V, ID = - 8.5 A
* Low Gate Charge (Typ.21 nC)
* Low Crss (Typ. 80 pF)
* 100% Avalanche Tested
* 175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless other

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60V P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP17P06-like datasheet

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