FQP47P06 Datasheet - ON Semiconductor

FQP47P06 P-Channel MOSFET

This P *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQP47P06 Features

* 47 A,

* 60 V, RDS(on) = 26 mW (Max.) @ VGS =

* 10 V, ID =

* 23.5 A

* Low Gate Charge (Typ. 84 nC)

* Low Crss (Typ. 320 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.com VDSS

FQP47P06-ONSemiconductor.pdf