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FQP47P06 - P-Channel MOSFET

FQP47P06 Description

MOSFET * P-Channel, QFET) -60 V, -47 A, 26 mW FQP47P06 .
This P. Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

FQP47P06 Features

* 47 A,
* 60 V, RDS(on) = 26 mW (Max. ) @ VGS =
* 10 V, ID =
* 23.5 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 320 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating DATA SHEET www. onsemi. com VDSS

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P-Channel MOSFET ON Semiconductor
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