FQP4N20L Datasheet - Fairchild Semiconductor

FQP4N20L - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQP4N20L Features

* 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A

* Low Gate Charge (Typ. 4.0 nC)

* Low Crss (Typ. 6.0 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

FQP4N20L_FairchildSemiconductor.pdf