Datasheet4U Logo Datasheet4U.com

FQP4N20L - N-Channel MOSFET

FQP4N20L Description

FQP4N20L * N-Channel QFET® MOSFET FQP4N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.35 Ω October 2013 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP4N20L Features

* 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max. ) @ VGS = 10 V, ID = 1.9 A
* Low Gate Charge (Typ. 4.0 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

📥 Download Datasheet

Preview of FQP4N20L PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQP4N60C - N-Channel MOSFET (HAOHAI)
  • FQP4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQP47P06 - P-Channel MOSFET (ON Semiconductor)
  • FQP10N20 - N-Channel 200V MOSFET (VBsemi)
  • FQP10N20C - N-Channel MOSFET (INCHANGE)
  • FQP10N60 - N-Channel MOSFET (Oucan Semi)
  • FQP10N65 - 10A N-Channel MOSFET (Oucan Semi)
  • FQP12N50 - 12A N-Channel MOSFET (Oucan Semi)

📌 All Tags

N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP4N20L-like datasheet

FQP4N20L Stock/Price