FQP4N20L N-Channel MOSFET

Fairchild Semiconductor

Description

FQP4N20L * N-Channel QFET® MOSFET FQP4N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.35 Ω October 2013 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQP4N20L
Manufacturer: Fairchild Semiconductor
File Size: 0.95 MB
Datasheet: FQP4N20L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max. ) @ VGS = 10 V, ID = 1.9 A
* Low Gate Charge (Typ. 4.0 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

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FQP4N20L N-Channel MOSFET Fairchild Semiconductor

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