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FQP4N80

800V N-Channel MOSFET

FQP4N80 Features

* 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings Sym

FQP4N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP4N80 Datasheet (650.66 KB)

Preview of FQP4N80 PDF

Datasheet Details

Part number:

FQP4N80

Manufacturer:

Fairchild Semiconductor

File Size:

650.66 KB

Description:

800v n-channel mosfet.

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FQP4N80 800V N-Channel MOSFET Fairchild Semiconductor

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