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FQP4N60C - N-Channel MOSFET

Datasheet Summary

Features

  • 　Originative New Design 　Superior Avalanche Rugged Technology 　Robust Gate Oxide Technology 　Very Low Intrinsic Capacitances 　Excellent Switching Characteristics 　Unrivalled Gate Charge: 15nC(Typ. ) 　Extended Safe Operating Area 　Lower RDS(ON): 2.0Ω(Typ. ) @ VGS=10V 　100% Avalanche Tested 　Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω.
  • 　、、、、、RoHS.
  • 　、LCD、LED、、UPS、 　、、、、、、 　、、.
  • 　TO-220P TO-220AB（） 　TO-220F TO-220FP（） 4N60 Series Pin Assignment 3-Lead Plastic TO-220.

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Datasheet preview – FQP4N60C

Datasheet Details

Part number FQP4N60C
Manufacturer HAOHAI
File Size 501.22 KB
Description N-Channel MOSFET
Datasheet download datasheet FQP4N60C Datasheet
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Full PDF Text Transcription

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs 5000Pcs ■Features 　Originative New Design 　Superior Avalanche Rugged Technology 　Robust Gate Oxide Technology 　Very Low Intrinsic Capacitances 　Excellent Switching Characteristics 　Unrivalled Gate Charge: 15nC(Typ.) 　Extended Safe Operating Area 　Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 　100% Avalanche Tested 　Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.
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