FQP9N30 - 300V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP9N30
Manufacturer	Fairchild ↗ Semiconductor
File Size	637.91 KB
Description	300V N-Channel MOSFET
Datasheet	FQP9N30_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

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Published: Apr 1, 2005 |