FQP9N50C 500V N-Channel MOSFET

Fairchild Semiconductor

Description

FQP9N50C * N-Channel QFET® MOSFET FQP9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ April 2014 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQP9N50C
Manufacturer: Fairchild Semiconductor
File Size: 1.38 MB
Datasheet: FQP9N50C_FairchildSemiconductor.pdf
Description: 500V N-Channel MOSFET

Features

* 9 A, 500 V, RDS(on) = 800 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 24 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage

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FQP9N50C 500V N-Channel MOSFET Fairchild Semiconductor

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