FQP9N50C Datasheet - Fairchild Semiconductor

FQP9N50C 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQP9N50C Features

* 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 24 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage

FQP9N50C_FairchildSemiconductor.pdf