Part number:
FQP9N50C
Manufacturer:
Fairchild Semiconductor
File Size:
1.38 MB
Description:
500v n-channel mosfet.
FQP9N50C_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in
FQP9N50C Features
* 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 24 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage
FQP9N50C_FairchildSemiconductor.pdf
Datasheet Details
FQP9N50C
Fairchild Semiconductor
1.38 MB
500v n-channel mosfet.
📁 Related Datasheet
📌 All Tags