FQP9N90C Datasheet - ON Semiconductor

FQP9N90C N-Channel MOSFET

This N *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQP9N90C Features

* 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A

* Low Gate Charge (Typ. 45 nC)

* Low Crss (Typ. 14 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free Halide, Free and RoHS Compliant. DATA SHEET www.onsemi.com GDS TO

* 220 CASE 221A

FQP9N90C-ONSemiconductor.pdf