FQP9P25 - 250V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP9P25
Manufacturer	Fairchild ↗ Semiconductor
File Size	783.49 KB
Description	250V P-Channel MOSFET
Datasheet	FQP9P25_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-9.4 A, -250 V, RDS(on) = 0.62 Ω (Max. )@VGS = -10 V, ID = -4.7 A.
Low gate charge ( typ. 29 nC).
Low Crss ( typ. 27 pF).
100% avalanche tested S G GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Ener.

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Published: Apr 1, 2005 |