FQP9P25

250V P-Channel MOSFET

Fairchild Semiconductor

FQP9P25 Features

* -9.4 A, -250 V, RDS(on) = 0.62 Ω (Max.)@VGS = -10 V, ID = -4.7 A

* Low gate charge ( typ. 29 nC)

* Low Crss ( typ. 27 pF)

* 100% avalanche tested S G GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

FQP9P25 General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP9P25 Datasheet (783.49 KB)