FQP9N30 - N-Channel MOSFET

ON Semiconductor

FQP9N30 Datasheet Preview — Preview of FQP9N30 PDF

Datasheet Details

Part number	FQP9N30
Manufacturer	ON Semiconductor ↗
File Size	247.80 KB
Description	N-Channel MOSFET
Datasheet	FQP9N30-ONSemiconductor.pdf

FQP9N30 Product details

Description

This N Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

9.0 A, 300 V, RDS(on) = 450 mW (Max. ) @ VGS = 10 V, ID = 4.5 A.
Low Gate Charge (Typ. 17 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested.

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Published: Jun 28, 2022 |