FQP9N30 N-Channel MOSFET

ON Semiconductor

Description

FQP9N30 N-Channel QFET) MOSFET 300 V, 9.0 A, 450 mW .
This N. Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

📥 Download Datasheet

FQP9N30 Datasheet Preview — Preview of FQP9N30 PDF

Datasheet Specifications

Part number: FQP9N30
Manufacturer: ON Semiconductor ↗
File Size: 247.80 KB
Datasheet: FQP9N30-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 9.0 A, 300 V, RDS(on) = 450 mW (Max. ) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 17 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted. ) Parameter Symbol Value Unit Drain
* Source Voltage Dr

FQP9N30 Distributors

📁 Related Datasheet

FQP9N08 FQP9N08L FQP9N15 FQP9N25 FQP9N50 FQP9N50C

📌 All Tags

FQP9N30 N-Channel MOSFET ON Semiconductor

ON Semiconductor FQP9N30-like datasheet