FQP9N30 - N-Channel MOSFET
This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch
FQP9N30 Features
* 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 17 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain
* Source Voltage Dr
