FQPF11N50CF Datasheet - Fairchild Semiconductor

500V N-Channel MOSFET

FQPF11N50CF Features

* 11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V, ID = 5.5 A

* Low Gate Charge (Typ. 43 nC)

* Low Crss (Typ. 20 pF)

* 100% Avalanche Tested

* Fast Recovery Body Diode D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Pa

FQPF11N50CF General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF11N50CF Datasheet (816.64 KB)

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Datasheet Details

Part number:

FQPF11N50CF

Manufacturer:

Fairchild Semiconductor

File Size:

816.64 KB

Description:

500v n-channel mosfet.

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FQPF11N50CF 500V N-Channel MOSFET Fairchild Semiconductor

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FQPF11N50CF Features

FQPF11N50CF General Description

Datasheet Details

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