FQPF11N50CF Datasheet - Fairchild Semiconductor

FQPF11N50CF 500V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF11N50CF Features

* 11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V, ID = 5.5 A

* Low Gate Charge (Typ. 43 nC)

* Low Crss (Typ. 20 pF)

* 100% Avalanche Tested

* Fast Recovery Body Diode D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Pa

FQPF11N50CF_FairchildSemiconductor.pdf