FQPF11P06 Datasheet - Fairchild Semiconductor

60V P-Channel MOSFET

FQPF11P06 Features

* -8.6 A, -60 V, RDS(on)=175 mΩ(Max.) @VGS=-10 V, ID=-4.3 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating S ! GD S TO-220F G!

* ▶▲

* ! D Absolute Maximum Ratings T

FQPF11P06 General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

FQPF11P06 Datasheet (746.40 KB)

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Datasheet Details

Part number:

FQPF11P06

Manufacturer:

Fairchild Semiconductor

File Size:

746.40 KB

Description:

60v p-channel mosfet.

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FQPF11P06 60V P-Channel MOSFET Fairchild Semiconductor

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FQPF11P06 Features

FQPF11P06 General Description

Datasheet Details

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