FQPF11P06 - 60V P-Channel MOSFET
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQPF11P06 Features
* -8.6 A, -60 V, RDS(on)=175 mΩ(Max.) @VGS=-10 V, ID=-4.3 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating S ! GD S TO-220F G!
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* ! D Absolute Maximum Ratings T
