FQPF1N60 - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF1N60
Manufacturer	Fairchild ↗ Semiconductor
File Size	542.04 KB
Description	600V N-Channel MOSFET
Datasheet	FQPF1N60_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

0.9A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Cu.

📁 FQPF1N60 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |