FQPF70N10 - 100V N-Channel MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQPF70N10 Features
* 35 A, 100 V, RDS(on) = 23 mΩ (Max.) @ VGS = 10 V, ID = 17.5 A
* Low Gate Charge (Typ. 85 nC)
* Low Crss (Typ. 150 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise
