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FQPF70N10 Datasheet - Fairchild Semiconductor

FQPF70N10 100V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF70N10 Features

* 35 A, 100 V, RDS(on) = 23 mΩ (Max.) @ VGS = 10 V, ID = 17.5 A

* Low Gate Charge (Typ. 85 nC)

* Low Crss (Typ. 150 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise

FQPF70N10_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQPF70N10

Manufacturer:

Fairchild Semiconductor

File Size:

462.59 KB

Description:

100v n-channel mosfet.

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FQPF70N10 FQPF70N10 100V N-Channel MOSFET Fairchild Semiconductor

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