FQT5N20 Datasheet - Fairchild Semiconductor

FQT5N20 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQT5N20 Features

* 1.0A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 6.0 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS I

FQT5N20_FairchildSemiconductor.pdf