FQT5P10 P-Channel MOSFET

Fairchild Semiconductor

Description

FQT5P10 P-Channel MOSFET FQT5P10 P-Channel QFET® MOSFET -100 V, -1.0 A, 1.05 Ω March 2013 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQT5P10
Manufacturer: Fairchild Semiconductor
File Size: 788.85 KB
Datasheet: FQT5P10_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -1.0 A, -100 V, RDS(on)=1.05 Ω(Max. ) @VGS=-10 V, ID=-0.5 A
* Low Gate Charge (Typ. 6.3 nC)
* Low Crss (Typ. 18 pF)
* 100% Avalanche Tested D S G SOT-223 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TST

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