FQT5P10 - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQT5P10
Manufacturer	Fairchild ↗ Semiconductor
File Size	788.85 KB
Description	P-Channel MOSFET
Datasheet	FQT5P10_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

-1.0 A, -100 V, RDS(on)=1.05 Ω(Max. ) @VGS=-10 V, ID=-0.5 A.
Low Gate Charge (Typ. 6.3 nC).
Low Crss (Typ. 18 pF).
100% Avalanche Tested D S G SOT-223 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Published: Apr 1, 2005 |