FQT5P10 Datasheet - Fairchild Semiconductor

FQT5P10 P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

FQT5P10 Features

* -1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A

* Low Gate Charge (Typ. 6.3 nC)

* Low Crss (Typ. 18 pF)

* 100% Avalanche Tested D S G SOT-223 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TST

FQT5P10_FairchildSemiconductor.pdf