FSGL130R Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

Fairchild Semiconductor

Description

FSGL130R Data Sheet www.DataSheet4U.com July 2001 File Number 4921 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec tho yw s ().

📥 Download Datasheet

FSGL130R Datasheet Preview — Preview of FSGL130R PDF

Datasheet Specifications

Part number: FSGL130R
Manufacturer: Fairchild Semiconductor
File Size: 217.67 KB
Datasheet: FSGL130R_FairchildSemiconductor.pdf
Description: Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

Features

* 12
* A, 100V, rDS(ON) = 0.080Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown
* Dose

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K

FSGL130R Distributors

📁 Related Datasheet

FSGM300N FSGS230R FSGYC260R FSGYE230R

📌 All Tags

FSGL130R Radiation Hardened SEGR Resistant N-Channel Power MOSFET Fairchild Semiconductor

Fairchild Semiconductor FSGL130R-like datasheet