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FSGYC260R Datasheet - Intersil Corporation

FSGYC260R N-Channel Power MOSFET

FSGYC260R TM Data Sheet May 2000 File Number 4851.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star Power Gold FETs combine this electrical capability with total dose radiatio.

FSGYC260R Features

* 56A, 200V, rDS(ON) = 0.033Ω

* UIS Rated

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bia

FSGYC260R_IntersilCorporation.pdf

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Datasheet Details

Part number:

FSGYC260R

Manufacturer:

Intersil Corporation

File Size:

82.14 KB

Description:

N-channel power mosfet.

FSGYC260R Distributor

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FSGYC260R FSGYC260R N-Channel Power MOSFET Intersil Corporation