FSGYC260R N-Channel Power MOSFET

Intersil Corporation

Description

FSGYC260R TM Data Sheet May 2000 File Number 4851.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star *Power Rad Hard MO.

📥 Download Datasheet

FSGYC260R Datasheet Preview — Preview of FSGYC260R PDF

Datasheet Specifications

Part number: FSGYC260R
Manufacturer: Intersil Corporation
File Size: 82.14 KB
Datasheet: FSGYC260R_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 56A, 200V, rDS(ON) = 0.033Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bia

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K

FSGYC260R Distributors

📁 Related Datasheet

FSGL130R FSGL134R FSGM0465R FSGM0465RB FSGM0565R FSGM0565RB

📌 All Tags

FSGYC260R N-Channel Power MOSFET Intersil Corporation

Intersil Corporation FSGYC260R-like datasheet

FSGYE230R

FSGS230R