FSGYC260R Datasheet (Intersil Corporation)

FSGYC260R, N-Channel Power MOSFET

FSGYC260R TM Data Sheet May 2000 File Number 4851.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star Power Rad Hard MOSFETs have been speciﬁcally developed for high performance applications in a commercial or military space environment.

Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.

Star Power Gold FETs combine this electrical capability with total dose radiatio

FSGYC260R Features

* 56A, 200V, rDS(ON) = 0.033Ω

* UIS Rated

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bia