FSGL134R Datasheet - Fairchild Semiconductor

FSGL134R Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

FSGL134R Data Sheet www.DataSheet4U.com July 2001 File Number 5011 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec tho yw s () eato OCI O mar Fairchild Star Power™ Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star Power Gold FETs combi.

FSGL134R Features

* 10A, 150V, rDS(ON) = 0.125Ω

* UIS Rated

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bi

FSGL134R_FairchildSemiconductor.pdf