FSGL134R Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

Fairchild Semiconductor

Description

FSGL134R Data Sheet www.DataSheet4U.com July 2001 File Number 5011 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec tho yw s ().

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Datasheet Specifications

Part number: FSGL134R
Manufacturer: Fairchild Semiconductor
File Size: 218.23 KB
Datasheet: FSGL134R_FairchildSemiconductor.pdf
Description: Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

Features

* 10A, 150V, rDS(ON) = 0.125Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bi

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K

FSGL134R Distributors

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FSGL134R Radiation Hardened SEGR Resistant N-Channel Power MOSFET Fairchild Semiconductor

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