FSGYE230R N-Channel Power MOSFET

Intersil Corporation

Description

FSGYE230R TM Data Sheet May 2000 File Number 4853.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star *Power Rad Hard MO.

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Datasheet Specifications

Part number: FSGYE230R
Manufacturer: Intersil Corporation
File Size: 81.82 KB
Datasheet: FSGYE230R_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 12A, 200V, rDS(ON) = 0.150Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bia

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K

FSGYE230R Distributors

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