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FSGYE230R Datasheet - Intersil Corporation

FSGYE230R N-Channel Power MOSFET

FSGYE230R TM Data Sheet May 2000 File Number 4853.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star Power Gold FETs combine this electrical capability with total dose radiatio.

FSGYE230R Features

* 12A, 200V, rDS(ON) = 0.150Ω

* UIS Rated

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bia

FSGYE230R Datasheet (81.82 KB)

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Datasheet Details

Part number:

FSGYE230R

Manufacturer:

Intersil Corporation

File Size:

81.82 KB

Description:

N-channel power mosfet.

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TAGS

FSGYE230R N-Channel Power MOSFET Intersil Corporation

FSGYE230R Distributor