FZT649 Discrete Power & Signal Technologies July 1998 FZT649 C E B C SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FZT649 25 35 5 3 -55 to +150 Units V V V A °C Operat
