FZT649
Fairchild Semiconductor
28.75 KB
Npn low saturation transistor.
FZT649
Discrete Power & Signal Technologies July 1998
FZT649
C E
B
C
SOT-223
NPN Low Saturation Transistor
These devices are designed with high .
📁 Related Datasheet
FZT649 - 25V NPN HIGH PERFORMANCE TRANSISTOR
(Diodes)
Features
• BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 300mV @ 1A • Complementary .
FZT600 - 140V NPN DARLINGTON TRANSISTOR
(Diodes)
Features
BVCEO > 140V BVCBO > 160V IC = 2A High Continuous Current NPN Darlington with Gain >10k Guaranteed hFE Specified up to 1A Lead-Fr.
FZT600B - 140V NPN DARLINGTON TRANSISTOR
(Diodes)
Features
BVCEO > 140V BVCBO > 160V IC = 2A High Continuous Current NPN Darlington with Gain >10k Guaranteed hFE Specified up to 1A Lead-Fr.
FZT603 - 80V NPN DARLINGTON TRANSISTOR
(Diodes)
Features
BVCEO > 80V BVCBO > 100V IC = 2A High Continuous Current Useful hFE up to 6A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halog.
FZT605 - 120V NPN DARLINGTON TRANSISTOR
(Diodes)
Features
BVCEO > 120V BVCBO > 140V IC = 1.5A High Continuous Current hFE > 2k for High Gain @ 1A Lead-Free Finish; RoHS Compliant (Notes 1 &.
FZT651 - High Performance Transistors
(Kexin)
SMD Type
Transistors
NPN Silicon Planar High Performance Transistors
FZT651
0.1max +0.050.90
-0.05
+0.151.65 -0.15
Features
60 Volt VCEO. 3 Amp co.
FZT651 - NPN HIGH PERFORMANCE TRANSISTOR
(Diodes)
Features
BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE(sat) < 300mV @ 1A Complementary .
FZT651Q - NPN HIGH PERFORMANCE TRANSISTOR
(Diodes)
A Product Line of Diodes Incorporated
Green
FZT651Q
60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223
Description
This Bipolar Junction Transistor (BJT) .
