HRF3205S Datasheet - Fairchild Semiconductor

HRF3205S N-Channel MOSFET

HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar s.

HRF3205S Features

* 100A, 55V (See Note)

* Low On-Resistance, rDS(ON) = 0.008Ω

* Temperature Compensating PSPICE® Model

* Thermal Impedance SPICE Model

* UIS Rating Curve

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Sym

HRF3205S_FairchildSemiconductor.pdf