HUFA75307T3ST - N-Channel MOSFET
HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications wher
HUFA75307T3ST Features
* 2.6A, 55V
* Ultra Low On-Resistance, rDS(ON) = 0.090Ω
* Diode Exhibits Both High Speed and Soft Recovery
* Temperature Compensating PSPICE® Model
* Thermal Impedance SPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
