HUFA75307T3ST Datasheet - Fairchild Semiconductor

HUFA75307T3ST N-Channel MOSFET

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications wher.

HUFA75307T3ST Features

* 2.6A, 55V

* Ultra Low On-Resistance, rDS(ON) = 0.090Ω

* Diode Exhibits Both High Speed and Soft Recovery

* Temperature Compensating PSPICE® Model

* Thermal Impedance SPICE Model

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

HUFA75307T3ST_FairchildSemiconductor.pdf

HUFA75307T3ST Datasheet Preview — Preview of HUFA75307T3ST PDF

Datasheet Details

Part number:

HUFA75307T3ST

Manufacturer:

Fairchild Semiconductor

File Size:

174.28 KB

Description:

N-channel mosfet.

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HUFA75307T3ST HUFA75307T3ST N-Channel MOSFET Fairchild Semiconductor

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