HUFA76413DK8T Datasheet (Fairchild Semiconductor)

HUFA76413DK8T, N-Channel MOSFET

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the d

HUFA76413DK8T Features

* 150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) M