Part number:
IRF550A
Manufacturer:
Fairchild Semiconductor
File Size:
261.73 KB
Description:
Advanced power mosfet.
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220
IRF550A
Fairchild Semiconductor
261.73 KB
Advanced power mosfet.
📁 Related Datasheet
IRF550 Advanced Power MOSFET (Fairchild Semiconductor)
IRF50N06 N-Channel MOSFET (YZPST)
IRF510 N-Channel MOSFET Transistor (Inchange Semiconductor)
IRF510 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF510 Power MOSFET (Vishay)
IRF510 Power MOSFET (International Rectifier)
IRF510A Advanced Power MOSFET (Fairchild Semiconductor)
IRF510PBF HEXFET POWER MOSFET (International Rectifier)
IRF510S Power MOSFET (International Rectifier)
IRF510S Power MOSFET (Vishay)
