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IRF550A - Advanced Power MOSFET

IRF550A Description

Advanced Power MOSFET .

IRF550A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220

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Datasheet Details

Part number
IRF550A
Manufacturer
Fairchild Semiconductor
File Size
261.73 KB
Datasheet
IRF550A_FairchildSemiconductor.pdf
Description
Advanced Power MOSFET

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF550A-like datasheet

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