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IRFI610B, IRFW610B Datasheet - Fairchild Semiconductor

IRFI610B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI610B Features

* 3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI

IRFW610B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFI610B, IRFW610B. Please refer to the document for exact specifications by model.
IRFI610B Datasheet Preview Page 2 IRFI610B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFI610B, IRFW610B

Manufacturer:

Fairchild Semiconductor

File Size:

683.58 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFI610B, IRFW610B.
Please refer to the document for exact specifications by model.

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TAGS

IRFI610B IRFW610B N-Channel MOSFET Fairchild Semiconductor

IRFI610B Distributor