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IRFI634B Datasheet - Fairchild Semiconductor

N-Channel MOSFET

IRFI634B Features

* 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G! G S D2-PAK IRFW Series G D S I2-PAK IRF

IRFI634B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI634B Datasheet (672.72 KB)

Preview of IRFI634B PDF

Datasheet Details

Part number:

IRFI634B

Manufacturer:

Fairchild Semiconductor

File Size:

672.72 KB

Description:

N-channel mosfet.

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IRFI634B N-Channel MOSFET Fairchild Semiconductor

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