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IRFI820B Datasheet - Fairchild Semiconductor

IRFI820B 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI820B Features

* 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFI820B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRFI820B

Manufacturer:

Fairchild Semiconductor

File Size:

649.34 KB

Description:

500v n-channel mosfet.

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IRFI820B IRFI820B 500V N-Channel MOSFET Fairchild Semiconductor

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