IRFI820B Datasheet - Fairchild Semiconductor

500V N-Channel MOSFET

IRFI820B Features

* 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFI820B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI820B Datasheet (649.34 KB)

IRFI820B Datasheet Preview — Preview of IRFI820B PDF

Datasheet Details

Part number:

IRFI820B

Manufacturer:

Fairchild Semiconductor

File Size:

649.34 KB

Description:

500v n-channel mosfet.

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IRFI820B 500V N-Channel MOSFET Fairchild Semiconductor

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IRFI820B Features

IRFI820B General Description

Datasheet Details

File Size:

Description:

IRFI820B Distributor