IRFI820B - 500V N-Channel MOSFET

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Fairchild Semiconductor

Part number	IRFI820B
Manufacturer	Fairchild Semiconductor
File Size	649.34 KB
Description	500V N-Channel MOSFET
Datasheet	IRFI820B Datasheet
Additional preview pages of the IRFI820B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Contin.

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Published: Apr 16, 2005 |