IRFI830B Datasheet (Fairchild Semiconductor)

IRFI830B, 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

IRFI830B Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D2-PAK IRFW Series G D S I2-PAK IRFI S