IRFI830B Datasheet - Fairchild Semiconductor

500V N-Channel MOSFET

IRFI830B Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFI830B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI830B Datasheet (677.19 KB)

IRFI830B Datasheet Preview — Preview of IRFI830B PDF

Datasheet Details

Part number:

IRFI830B

Manufacturer:

Fairchild Semiconductor

File Size:

677.19 KB

Description:

500v n-channel mosfet.

📁 Related Datasheet

IRFI830 500V N-Channel MOSFET (Fairchild Semiconductor)

IRFI830A Power MOSFET (Samsung)

IRFI830G Power MOSFET (International Rectifier)

IRFI830G Power MOSFET (Vishay)

IRFI820 HEXFET Power MOSFET (International Rectifier)

IRFI820A Advanced Power MOSFET (Fairchild Semiconductor)

IRFI820B 500V N-Channel MOSFET (Fairchild Semiconductor)

IRFI820G HEXFET Power MOSFET (International Rectifier)

IRFI840A Advanced Power MOSFET (Fairchild Semiconductor)

IRFI840B 500V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRFI830B 500V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFI830B Features

IRFI830B General Description

Datasheet Details

File Size:

Description:

IRFI830B Distributor