Datasheet4U Logo Datasheet4U.com

IRFI830B Datasheet - Fairchild Semiconductor

IRFI830B 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI830B Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFI830B Datasheet (677.19 KB)

Preview of IRFI830B PDF
IRFI830B Datasheet Preview Page 2 IRFI830B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFI830B

Manufacturer:

Fairchild Semiconductor

File Size:

677.19 KB

Description:

500v n-channel mosfet.

📁 Related Datasheet

IRFI830 500V N-Channel MOSFET (Fairchild Semiconductor)

IRFI830A Power MOSFET (Samsung)

IRFI830G Power MOSFET (International Rectifier)

IRFI830G Power MOSFET (Vishay)

IRFI820 HEXFET Power MOSFET (International Rectifier)

IRFI820A Advanced Power MOSFET (Fairchild Semiconductor)

IRFI820B 500V N-Channel MOSFET (Fairchild Semiconductor)

IRFI820G HEXFET Power MOSFET (International Rectifier)

TAGS

IRFI830B 500V N-Channel MOSFET Fairchild Semiconductor

IRFI830B Distributor