Part number: IRFP140A
Manufacturer: Fairchild Semiconductor
File Size: 256.18KB
Download: 📄 Datasheet
Description: Advanced Power MOSFET
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leaka.
Image gallery
TAGS
📁 Related Datasheet
IRFP140 - Power MOSFET
(Vishay)
Power MOSFET
IRFP140, SiHFP140
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
.
IRFP140 - N-channel Power MOSFET
(Fairchild Semiconductor)
.
IRFP140 - Power MOSFET
(International Rectifier)
.
IRFP140 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP140
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤77mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFP1405 - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 95810
AUTOMOTIVE MOSFET
IRFP1405
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operatin.
IRFP1405 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP1405，IIRFP1405
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche te.
IRFP1405PBF - Power MOSFET
(International Rectifier)
PD - 95509A
IRFP1405PbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive.
IRFP140N - Power MOSFET
(International Rectifier)
PD - 91343B
IRFP140N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Full.
IRFP140N - N-Channel Power MOSFET
(Intersil Corporation)
IRFP140N
TM
Data Sheet
March 2000
File Number
4841
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Feature.
IRFP140N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP140N，IIRFP140N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤52mΩ ·Enhancement mode: ·100% avalanche tes.
