Part number: IRFP1405PBF
Manufacturer: International Rectifier
File Size: 261.60KB
Download: 📄 Datasheet
Description: Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description .
G
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 5.3mΩ S ID = 95A
S GD TO-247AC
Absolute Maximum Ratings
Parameter
ID.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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