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IRFP1405PBF Power MOSFET

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Description

PD - 95509A IRFP1405PbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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Applications

* G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.3mΩ S ID = 95A S GD TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package

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