Part number: IRFP150N
Manufacturer: International Rectifier
File Size: 170.35KB
Download: 📄 Datasheet
Description: Power MOSFET
ver same type as D.U.T.
* ISD controlled by Duty Factor "D"
* D.U.T. - Device Under Test
+ - VDD
Driver Gate Drive
P.W.
Period
D=
P.W. Period
VGS=10V *
D..
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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