IRFP150N Datasheet - International Rectifier

IRFP150N, Power MOSFET

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFP150N_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFP150N

Manufacturer:

International Rectifier

File Size:

170.35 KB

Description:

Power MOSFET

Features

* AMPLE : THIS IS AN IRFPE30 W ITH ASSEMBLY LOT CODE 3A1Q IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE IR F P E 3 0 3A1Q 9302 LE A D A S S IG N M E N TS 1 - GATE 2 - DR A IN 3 - SOURCE 4 - DR A IN A PART NUMBER DATE CODE (YYW W ) YY = YEAR W W W EEK Data and specifications subjec

Applications

* The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM

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IRFP150N Power MOSFET International Rectifier

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