* 3.1A, 400V
* rDS(ON) = 1.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRFR320
Fairchild Semiconductor
83.46 KB
N-channel power mosfets.
IRFR320, IRFU320
Data Sheet July 1999 File Number 2412.3
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
📁 Related Datasheet
IRFR320 Power MOSFET (International Rectifier)
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IRFR320 Power MOSFET (Vishay Siliconix)
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IRFR320A Power MOSFET (Samsung)
IRFR320B 400V N-Channel MOSFET (Fairchild Semiconductor)
IRFR310 Power MOSFET (Fairchild Semiconductor)
IRFR310 Power MOSFET (International Rectifier)
IRFR310 Power MOSFET (Vishay Siliconix)
IRFR310 N-Channel MOSFET (INCHANGE)
