IRFS250A - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFS250A
Manufacturer	Fairchild ↗ Semiconductor
File Size	253.01 KB
Description	Power MOSFET
Datasheet	IRFS250A-FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.071 Ω(Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Cu.

📁 IRFS250A Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 3, 2016 |