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ISL9N307AS3ST N-Channel Power MOSFET

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Description

ISL9N307AP3/ISL9N307AS3ST January 2002 ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Descript.
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

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