KSC5302D - NPN Epitaxial Silicon Transistor
KSC5302D KSC5302D High Voltage High Speed Power Switch Application High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread Even though corner spirit product Low base drive requirement B Equivalent Circuit C 1 E TO-220 2.Collector 3.Emitter 1.Base NPN Sili
