KSC5302DM - NPN Epitaxial Silicon Transistor
KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement B Equivalent Circuit C 1 E TO-126 2.Collector 3.Base 1.
Emitter NPN Silicon Tr
