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MJD112 NPN Silicon Darlington Transistor

MJD112 Description

MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor .

MJD112 Features

* High DC Current Gain
* Built-in a Damper Diode at E-C

MJD112 Applications

* (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2 Absolute Maximum Ratings
* Ta = 25°C unless otherwise noted Symbol Parameter R1 ≅ 10kΩ R2 ≅ 0.6kΩ E Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Vo

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Datasheet Details

Part number
MJD112
Manufacturer
Fairchild Semiconductor
File Size
113.67 KB
Datasheet
MJD112-FairchildSemiconductor.pdf
Description
NPN Silicon Darlington Transistor

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NPN Silicon Darlington Transistor Fairchild Semiconductor
Fairchild Semiconductor MJD112-like datasheet