P2N80 - FQP2N80

Fairchild Semiconductor

Datasheet Details

Part number	P2N80
Manufacturer	Fairchild Semiconductor
File Size	454.80 KB
Description	FQP2N80
Datasheet	P2N80_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

2.4 A, 800 V, RDS(on) = 6.3 Ω (Max. ) @ VGS = 10 V, ID = 1.2 A.
Low Gate Charge (Typ. 12 nC).
Low Crss (Typ. 5.5 pF).
100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP2N80 800 2.4 1.52 9.6 ± 30 (Note 2) (Note 1) (Note.

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Published: Jan 27, 2014 |