P2N80 Datasheet - Fairchild Semiconductor

P2N80, FQP2N80

FQP2N80 * N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

* 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max. ) @ VGS = 10 V, ID = 1.2 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless o

P2N80_FairchildSemiconductor.pdf