RFP3055 Datasheet - Fairchild Semiconductor

RFP3055 N-Channel Power MOSFET

RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipo.

RFP3055 Features

* 12A, 60V

* rDS(ON) = 0.150Ω

* Temperature Compensating PSPICE® Model

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* 175oC Operating Temperature

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Bo

RFP3055_FairchildSemiconductor.pdf

RFP3055 Datasheet Preview — Preview of RFP3055 PDF

Datasheet Details

Part number:

RFP3055

Manufacturer:

Fairchild Semiconductor

File Size:

418.35 KB

Description:

N-channel power mosfet.

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RFP3055 RFP3055 N-Channel Power MOSFET Fairchild Semiconductor

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