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SSM1N45B

450V N-Channel MOSFET

SSM1N45B Features

* 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V

* Low gate charge ( typical 6.5 nC)

* Low Crss ( typical 6.5 pF)

* 100% avalanche tested

* Improved dv/dt capability

* Gate-Source Voltage ± 50V guaranteed D S G SOT-223 SSM Series G! D !

* ◀▲

SSM1N45B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSM1N45B Datasheet (639.22 KB)

Preview of SSM1N45B PDF

Datasheet Details

Part number:

SSM1N45B

Manufacturer:

Fairchild Semiconductor

File Size:

639.22 KB

Description:

450v n-channel mosfet.

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SSM1N45B 450V N-Channel MOSFET Fairchild Semiconductor

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