SW1N60A Datasheet, Ssw1n60a, Fairchild Semiconductor

SW1N60A Features

• Ssw1n60a Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Ext

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SW1N60A

Manufacturer:

Fairchild Semiconductor

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279.83kb

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📄 Datasheet

Description:

ssw1n60a.

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SW1N60A

Fairchild Semiconductor

📁 Related Datasheet

SW1N60 - MOSFET (SEMIPOWER)
SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% A.

SW1N60A - MOSFET (SEMIPOWER)
SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% .

SW1N60C - N-channel D-PAK/I-PAK/TO-92 MOSFET (SAMWIN)
SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typ.

SW1N60D - MOSFET (SEMIPOWER)
SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■.

SW1N60E - N-channel Enhanced mode TO-92/TO-251 MOSFET (SEMIPOWER)
SW1N60E N-channel Enhanced mode TO-92/TO-251 MOSFET Features TO-92 TO-251  High ruggedness  Low RDS(ON) (Typ7.3Ω)@VGS=10V  Low Gate Charge (Ty.

SW1N60L - MOSFET (SEMIPOWER)
SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100.

SW1N55D - MOSFET (SEMIPOWER)
SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt C.

SW1N70A - MOSFET (SEMIPOWER)
SAMWIN SW1N70A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% .

SW1N70C - MOSFET (SEMIPOWER)
SAMWIN SW1N70C Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested .

SW1N80A - MOSFET (SEMIPOWER)
SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100% .