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SW1N60

MOSFET

SW1N60 Features

* High ruggedness

* RDS(ON) (Max 12 Ω)@VGS=10V

* Gate Charge (Max 6nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SA

SW1N60 General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW1N60 Datasheet (690.92 KB)

Preview of SW1N60 PDF

Datasheet Details

Part number:

SW1N60

Manufacturer:

SEMIPOWER

File Size:

690.92 KB

Description:

Mosfet.

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SW1N60 MOSFET SEMIPOWER

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